sot89 npn silicon power (switching) transistor isssue 1 - november 1998 features * 2w power dissipation * 10a peak pulse current * excellent h fe characteristics up to 10 amps * extremely low saturation voltage complimentary type - fcx789a partmarking detail - 688 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 12 v collector-emitter voltage v ceo 12 v emitter-base voltage v ebo 5v peak pulse current ** i cm 10 a continuous collector current i c 3a power dissipation at t amb =25c p tot 1 ? 2 ? w w operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 15x15x0.6mm ? maximum power dissipation is calculated assuming that the device is mounted on fr4 substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by other suppliers. **measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices refer to the handling instructions for soldering surface mount components. c b c e FCX688B
electrical characteristics (at t amb = 25c) parameter symbol min typ max unit conditions. collector-base breakdown voltage v (br)cbo 12 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 12 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5v i e =100 m a collector cut-off current i cbo 0.1 m a v cb =9v emitter cut-off current i ebo 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 40 60 180 350 400 mv mv mv mv mv i c =0.1a, i b =1ma * i c =0.1a, i b =0.5ma * i c =1a, i b =10ma * i c =3a, i b =10ma * i c =4a, i b =50ma * base-emitter saturation voltage v be(sat) 1.1 v i c =3a, i b =20ma * base-emitter turn-on voltage v be(on) 1.0 v ic=3a, v ce =2v * static forward current transfer ratio h fe 500 400 100 i c =100ma, v ce =2v* i c =3a, v ce =2v* i c =10a, v ce =2v* transition frequency f t 150 mhz i c =50ma, v ce =5v f=50mhz input capacitance c ibo 200 pf v eb =0.5v, f=1mhz output capacitance c obo 40 pf v cb =10v, f=1mhz switching times t on t off 40 500 ns ns i c =500ma, i b1 =i b2 =50ma v cc =10v *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FCX688B
-55c +25c +100c +175c +100c +25c -55c 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 0.4 0.2 0 0.8 0.6 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 0.01 0.1 1 10 1.0 0.8 0.6 0.4 0 0.2 1.6 1.4 1.2 typical characteristics typical characteristics v v ce(sat)ce(sat) v iv i cc i c - collector current (amps) v v ce(sat)ce(sat) v iv i cc i c - collector current (amps) i c - collector current (amps) i c - collector current (amps) hh fefe v iv i cc v v be(sat)be(sat) v iv i cc i c - collector current (amps) vv be(on)be(on) v iv i cc v ce =2v v ce =2v 1.5k 1k 500 v ce - collector voltage (volts) safe operating area safe operating area -55c +25c +100c +175c i c /i b =100 t amb =25c i c /i b =10 i c /i b =200 i c /i b =100 i c /i b =100 -55c +25c +100c +175c 0 0 100m 10 100 1s 100ms 10 1 dc 0.01 10ms 1ms 100us 1 0.1 FCX688B
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